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Microelectronic devices are in a continuous evolution day after day in the cycle of technology since the invention of the first active device in the human history such as the MESFET device .The main objective of this design project is to make students able to model a Gallium Arsenide (GaAs) Metal-Semiconductor Field-Effect-Transistor (MESFET) device using the Silvaco software where the MESFET is used in several real-life applications such as microwaves, RF technology, radar devices, satellite communications and optoelectronics as well. Furthermore, we used the silvaco software in order to see the physical characteristics of MESFET device by dividing our work in this project into two main parts where in the first part, we wrote a set of Silvaco Athena and ATLAS commands to model the structure of GaAs MESFET device, and in the second part, we simulated and investigated the breakdown voltage of the GaAs MESFET device by using the stored codes in the Silvaco software that is related to MESFET device. Ultimately, we will be able to study the behavior of the MESFET device under various conditions of channel doping in order to be able to improve the breakdown voltage of MESFET device by applying what we have learned so far from the Microelectronics lectures to implement solutions for electrical engineering problems in our world.

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